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The Structure and Growth Rates of Ge7Sb93-Crystals

Niebuur, B.J. (2013) The Structure and Growth Rates of Ge7Sb93-Crystals. Bachelor's Thesis, Physics.

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Abstract

In this report, the properties of Ge7Sb93-crystals, which are related to the use of this material in nonvolatile data storage devices, have been investigated. These Sb-rich phase change materials were in the past found to show highest possible growth speeld, but turned out to have some problems with phase stability. A detailed study about the material might reveal new insights which can be useful in this area of research. The internal structure as well as the growth rate at certain temperatures of Ge7Sb93-crystals have been investigated. A transmission electron microscope is used to investigate the samples, consisting of a 50 nm thick Ge7Sb93-layer on a silicon-nitride substrate. Diffraction is used to investigate the internal structure of the crystals while in-situ heating is used to measure the growth rate of the material at various temperatures. Also a heating stage in combination with an optical microscope is used to measure the growth rate as a function of temperature. Crystals with an overall triangular shape were observed, where in the centers of these crystals the hexagonal lattice is aligned vertical, hence with the c-axis pointing upwards. In the direction of the corners, the lattice rotates in the direction of that corner and grows eventually at a constant angle of 53 degrees with respect to the lattice in the center. The relation between the growth rate of the crystals and the temperature is found to be of Arrhenius type with an activation energy for growth of about 2.2 eV.

Item Type: Thesis (Bachelor's Thesis)
Degree programme: Physics
Thesis type: Bachelor's Thesis
Language: English
Date Deposited: 15 Feb 2018 07:52
Last Modified: 15 Feb 2018 07:52
URI: http://fse.studenttheses.ub.rug.nl/id/eprint/10847

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