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amorphous 200nm and 2µm thick Ga(x)Sb(100-x) phase-change films

Over, K.B. (2013) amorphous 200nm and 2µm thick Ga(x)Sb(100-x) phase-change films. Master's Thesis / Essay, Physics.

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This report covers the production process of Ga(x)Sb(100-x) layers on a glass substrate with various compositions and thicknesses using e-beam evaporation and the subsequent analysis of the crystallisation of these layers by isothermal annealing using the Arrhenius equation and JMAK theory. The kinetic properties of these layers are compared to results of isothermal annealing of layers of Ge(x)Sb(100-x) layers obtained by Gert Eising. It will be shown that the composition of the deposited layer is not uniform during the deposition process, but depends on target composition, evaporation speed and target shape. Germanium is shown to have a stronger stabilising effect on the amorphous layer than Gallium. A relaxation effect in the Ga(x)Sb(100-x) layers is observed, which causes the observed growth rate of the crystals to increase exponentially in time. Subsequent adjustment of the Avrami equation allows for a reasonably accurate description of the crystallisation process, with the indication that also the nucleation probability $n$ is affected by the relaxation effect. The observed relaxation effect was only observed in layers that were deposited at a rate higher than 0.2 nm/s.

Item Type: Thesis (Master's Thesis / Essay)
Degree programme: Physics
Thesis type: Master's Thesis / Essay
Language: English
Date Deposited: 15 Feb 2018 07:54
Last Modified: 15 Feb 2018 07:55

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