Towards slow light with inhomogeneous ensembles of color centers in silicon carbide

Brinkhuis, Wessel (2018) Towards slow light with inhomogeneous ensembles of color centers in silicon carbide. Bachelor's Thesis, Applied Physics.

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Abstract

In our research group the possibilities to use color centers in silicon carbide in quantum information systems are investigated, since they have long coherence times and optical transitions in the telecom regime. In this work c-axis divacancies are considered. To characterize these defects the phenomenon electromagnetically induced transparency can be used. In earlier work a mathematical model was developed to calculate the response of the 6-level system of the defects by solving the master equation in Lindblad form. In this work the impact of the inhomogeneous broadening of the optical transitions in the ensemble is investigated. The existing model is extended to incorporate the effects of inhomogeneous broadening. An efficient integration method was implemented to significantly reduce computational times. It was found that in order to accurately describe this broadening only the defects in the ensemble in a finite range of detuning from resonance need to be considered. In the model contributions from two different driving schemes were considered. By applying the Frank-Condon principle the decay rates are related to each other and similarly the Rabi frequencies of the transitions are related. Furthermore, the influence of off-resonance transitions in the model is considered. The built model has the potential to allow more accurate extraction of relevant parameters like the decay and dephasing rates out of experimental data.

Item Type:	Thesis (Bachelor's Thesis)
Supervisor name:	Wal, C.H. van der
Degree programme:	Applied Physics
Thesis type:	Bachelor's Thesis
Language:	English
Date Deposited:	11 Jul 2018
Last Modified:	19 Jul 2018 12:07
URI:	https://fse.studenttheses.ub.rug.nl/id/eprint/17783

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