Nonlinear Hall Measurements and Characterization on Few-Layer ZrTe3

Dam, Thomas Yorik Antonie (2021) Nonlinear Hall Measurements and Characterization on Few-Layer ZrTe3. Bachelor's Thesis, Physics.

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Abstract

A new group of two-dimensional (2D) van der Waals materials has recently been uncovered: the transition metal trichalcogenides (TMTs). These have hardly been studied and are promising in the application in photonic and electronic devices, such as field effect transistors. Their comparatively high stability with respect to mono-atomic 2D materials as graphene, silicene and phosphorene makes them interesting candidates for 2D devices. Also, they have a higher chemical reactivity of TMTs compared to transition metal dichalcogenides (TMDs), which inproves device funtionalization. This, and the opportunity of studying more fundamental concepts such as charge density waves (CDW) in these materials makes them attractive objects of study. In this thesis, few-layer (100 nm thick) zirconium tritelluride (ZrTe3) is characterized. ZrTe3 is a very scarcely studied TMT, with a CDW below 63 K. The CDW can induce a Berry curvature dipole which can give rise to a second order Hall effect. The CDW was not observed in our measurements, which can be most attributed to the high sensitivity to impurities literature describes for CDW formation in ZrTe3. However, a characterization with a resistivity-temperature graph was achieved. At low temperature a clear anisotropic resistivity was seen in the material, as expected from literature.

Item Type:	Thesis (Bachelor's Thesis)
Supervisor name:	Diniz Guimaraes, M.H. and Slawinska, J.L.
Degree programme:	Physics
Thesis type:	Bachelor's Thesis
Language:	English
Date Deposited:	12 Jul 2021 10:06
Last Modified:	12 Jul 2021 10:06
URI:	https://fse.studenttheses.ub.rug.nl/id/eprint/25148

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