Veen, Fleur (2021) Energy loss and scattering of energetic Sn ions interacting with H2: Prospects of Time-of-Flight investigations. Bachelor's Thesis, Applied Physics.
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Abstract
The innovation of semiconductor industries keeps minimizing the size of chips in tech- nological devices, companies like ASML keep this innovation alive. The development of the extreme ultra violet light sources is pushing Moore’s law forward, as the EUV light source can produce 13.5 nm light which makes the production of super small chips possible. In the EUV lithography machines of AMSL a multi-kilowatt laser hits tin droplets such that a plasma is created which emits the 13.5 nm light. However, highly energized tin ions are created as well which can damage the mirrors inside the light source. Hydrogen gas is used to slow down these ions, but this gas also absorbs part of the EUV light from the source. Therefore experiments are performed to investigate the interaction between tin ions and hydrogen gas, as the energy of tin ions passing through hydrogen gas can be measured by using time of flight spectroscopy techniques. The focus of this thesis will be to gain insight into the influence of energy strag- gling and range straggling on the time of flight of tin ions passing through a hydrogen target. To do so simulations based on the ARCNL ESA-ToF analyser set-up will be performed in the simulation program SRIM. Moreover, the prospect of using a localized pressure target will be investigated.
| Item Type: | Thesis (Bachelor's Thesis) |
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| Supervisor name: | Hoekstra, R.A. |
| Degree programme: | Applied Physics |
| Thesis type: | Bachelor's Thesis |
| Language: | English |
| Date Deposited: | 03 Sep 2021 09:11 |
| Last Modified: | 03 Sep 2021 09:11 |
| URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/25930 |
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