Doped SrSnO3 for low strain BaTiO3 ferroelectric field effect transistors

Brand, Eric (2021) Doped SrSnO3 for low strain BaTiO3 ferroelectric field effect transistors. Master's Thesis / Essay, Physics.

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Abstract

In this thesis, the use of doped SrSnO3 for low strain BaTiO3 ferroelectric field effect transistors (FeFETs) is considered. These low strain BaTiO3 FeFETs possibly have memristive properties, which can be exploited for use in neuromorphic computing. Strain engineering of BaTiO3 can lead to novel ferroelectric phases. Low strain BaTiO3 can posses ferroelectric a/c domain, as has be shown by A. Everhardt(2017). The a/c domains have different polarisation time constants, the different polarisation time constants can be utilised for implementing the spike-time-dependent-plasticity (STDP) mechanism in an FeFET. To produce a/c domains the BaTiO3 is strained by doped SrSnO3. A doped SrSnO3 film is grown on a SrTiO3 substrate. The BaTiO3 is grown under low strain on the doped SrSnO3 film. The master research project focusses on using Nb doped SrSnO3 as an n-channel material in a FeFET and the electrical characterisation of the Ti/BaTiO3/Y0.05Sr0.95SnO3 stack for the use of Ti as an gate electrode.

Item Type:	Thesis (Master's Thesis / Essay)
Supervisor name:	Hamming-Green, R.P. and Noheda, B.
Degree programme:	Physics
Thesis type:	Master's Thesis / Essay
Language:	English
Date Deposited:	27 Sep 2021 10:49
Last Modified:	29 Sep 2021 12:51
URI:	https://fse.studenttheses.ub.rug.nl/id/eprint/26036

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