Bruno, Michael (2022) Characterizing spectral diffusion in V4+ doped 4H-SiC. Bachelor's Thesis, Physics.
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Abstract
This paper attempts to uncover more information on the phenomena of spectral diffusion occurring within a V 4+ doped 4H-SiC sample. A model was developed in python in order to study the fluctuations in the number of defects that could absorb a laser light with a specific wavelength at each point in time. Different spectral diffusion speeds were compared, but no difference was found over the timescales used. In parallel with the modelling, an experiment was carried out where comparisons were made between signals arising from the laser light only and the signal resulting from absorption of the light by the SiC sample situated within a cryostat. The peaks found comparing the two signals were at identical frequencies, but a clear heightening of the signal noise floor was observed when the laser passed through the sample. This difference disappeared at room temperature and was found to increase with increasing laser power. This suggests some temperature dependent interactions occurring, but is likely not due to vanadium defects as the difference also appears when using laser light off resonance.
| Item Type: | Thesis (Bachelor's Thesis) |
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| Supervisor name: | Wal, C.H. van der and Palasantzas, G. |
| Degree programme: | Physics |
| Thesis type: | Bachelor's Thesis |
| Language: | English |
| Date Deposited: | 27 Jul 2022 07:28 |
| Last Modified: | 07 Jun 2023 07:45 |
| URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/27827 |
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