Puicercus, Alfonso (2024) Characterization of the VeloPix Detector Gain Response to Fe55 Irradiation. Master's Thesis / Essay, Physics.
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Abstract
A new silicon pixel detector, known as the Vertex Locator (VELO), is currently being commissioned, with its calibration being crucial for its operation at LHCb. In pursuit of characterizing the Velopix, an Application-Specific Integrated Circuit (ASIC) which is a key component of the VELO’s silicon pixel modules, controlled scenarios using exposure to a radiation source were used. A study on the energy deposition is presented, together with an exploration on the behaviour of the physical parameters of individual pixels is compared to that of the overall ASIC. This paper mainly investigates the conversion factor or gain K[e-/DAC], which is a relevant parameter for the operation of the detector. This thesis presents a detailed study on the calibration of the gain of the Velopix detector under irradiation from the quasi-monochromatic Fe55 source at two different operating temperatures. The gain was determined to be 14.33 ± 0.02 (stat) ± 0.16 (syst) [e-/DAC] at -20ºC and 13.14 ± 0.01 (stat) ± 0.44 (syst) [e-/DAC] at 20ºC, demonstrating a temperature dependence. The study also looked into the reliability of using the ASIC average flux as a predictor of the mean pixel gain, finding it to be a plausible method. Factors such as exposure time, positional bias of pixels and operating temperature are explored and identified as influential on the gain measurements. Furthermore, a comparison to the gain estimated on the Velopix ASIC design paper shows a compatibility within 2.07 σ.
Item Type: | Thesis (Master's Thesis / Essay) |
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Supervisor name: | Bruyn, K.A.M. de and Hoekstra, S. |
Degree programme: | Physics |
Thesis type: | Master's Thesis / Essay |
Language: | English |
Date Deposited: | 24 Jul 2024 12:49 |
Last Modified: | 24 Jul 2024 12:49 |
URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/33675 |
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