Novák, Zalán (2026) Electrical Characterization of Enhanced Lateral Drift (ELAD) Silicon Sensors. Bachelor's Thesis, Physics.
|
Text
bPHY2026ZalanNovak.pdf Download (50MB) | Preview |
Abstract
To improve the spatial resolution of silicon sensors for future lepton colliders, a new type of silicon sensor, called the Enhanced Lateral Drift (ELAD) sensor, has been simulated in previous studies. This thesis focuses on the electrical testing and characterization of the first ELAD silicon sensor prototypes. The characterization includes the measurement and interpretation of the leakage current and capacitance for n-in-p ELAD silicon diodes and strip sensors as a function of the reverse bias voltage to confirm optimal operation between −200 V and −300 V, the range within which previous simulations demonstrated the best spatial resolution results. Additionally, the study aims to demonstrate the effects of different measurement settings on the punch-through and full depletion voltages of the sensors. The measurements demonstrate that ELAD sensors exhibit hysteresis in both their current and capacitance characteristics, and that no temporal effects are observed that influence the punch-through and full depletion voltages of the sensors. The measurements also suggest that the ELAD strip sensors become fully depleted at around −170 V, which confirms that ELAD sensors are fully depleted at the simulated optimal operating voltages.
| Item Type: | Thesis (Bachelor's Thesis) |
|---|---|
| Supervisor name: | Perrevoort, A. and Bruyn, K.A.M. de |
| Degree programme: | Physics |
| Thesis type: | Bachelor's Thesis |
| Language: | English |
| Date Deposited: | 08 Jul 2026 13:34 |
| Last Modified: | 09 Jul 2026 04:15 |
| URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/37346 |
Actions (login required)
 |
View Item |