Jäger-Waldau, Valentin (2026) Effect of Composition and Synthesis Temperature on Crystal Structure and Optoelectronic Properties of BaCu2S2. Bachelor's Thesis, Applied Physics.
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Abstract
The ternary chalcogenide compound BaCu2S2, composed of earth-abundant elements, is a p-type semiconductor with a calculated band gap of 1.62 eV [1] and reported experimental optical band gaps of 2.1–2.47 eV [2][3][4]. Experimental band gaps, optical transparency, and conductivities have been reported within ranges relevant for p-type transparent conducting materials (TCMs) [2][3][4][5], with possible applications as p-type contact layers. In combination with the highly limited number of studies on thin-film samples, these promising results motivated an investigation of the fundamental material properties of BaCu2S2 thin films, focusing on the effects of elemental composition and pro- cessing temperature on phase development and optoelectronic properties. For this purpose, Ba-rich regions of the Ba–Cu–S compositional space were investigated. Films were synthesised by sulfurisa- tion of Cu–BaO precursors deposited by pulsed laser deposition on 12 ×50 mm2 substrates. Samples were prepared on both quartz-glass and Mo-coated quartz-glass substrates. Sulfurisation was con- ducted using elemental sulfur at discrete temperatures between 370◦C and 470 ◦C. Post-deposition annealing was conducted either at discrete temperatures between 370◦C and 420 ◦C or by applying temperature gradients between 370◦C and 570 ◦C along the substrates. The elemental composition of the films was mapped using X-ray fluorescence (XRF) analysis, revealing Ba-rich compositional ranges of [Cu]/([Ba] + [Cu]) ≈0
| Item Type: | Thesis (Bachelor's Thesis) |
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| Supervisor name: | Schlatholter, T.A. and Loi, M.A. |
| Degree programme: | Applied Physics |
| Thesis type: | Bachelor's Thesis |
| Language: | English |
| Date Deposited: | 26 Aug 2026 14:39 |
| Last Modified: | 26 Aug 2026 14:39 |
| URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/37517 |
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