Simulating the Emission of Spontaneous Spin-Flip Raman Photons from Ensembles of Donor-Bound Electrons in n-GaAs

Volker, S.F.P. (2015) Simulating the Emission of Spontaneous Spin-Flip Raman Photons from Ensembles of Donor-Bound Electrons in n-GaAs. Master's Thesis / Essay, Physics.

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Abstract

To create spin-photon entanglement for quantum information science purposes, we study three-level lambda systems in an ensemble of electronic spins in silicon-doped GaAs. This thesis simulates the rate, spectral width, and nature of the spontaneous light emission (SLE) spectrum at (near-) resonant excitation. Two models are used: a master equation model of the density matrix, and a third-order perturbative approach of the density matrix that distinguishes between (spin-flip) Raman and fluorescence light. For both models, we find strong SLE signals, which deplete the pump beam for the parameters of our system. We obtain a total SLE scattering cross-section of 4 μm^2 using the perturbative approach. A strong effect of pure dephasing of the excited state is found; Raman dominates fluorescence for zero pure dephasing, but fluorescence dominates for pure dephasing rates larger than half the population relaxation rate. We further find that Raman photons have the width of the ground-state broadening, whereas fluorescence has a typical width of several times the homogeneous broadening of the excited state, the additional broadening being caused by the excited-state inhomogeneous broadening. To obtain a further understanding of the Raman spectrum, off-resonance Raman scattering, the Brownian oscillator model, and stimulated Raman scattering could be studied.

Item Type:	Thesis (Master's Thesis / Essay)
Degree programme:	Physics
Thesis type:	Master's Thesis / Essay
Language:	English
Date Deposited:	15 Feb 2018 08:03
Last Modified:	15 Feb 2018 08:03
URI:	https://fse.studenttheses.ub.rug.nl/id/eprint/12555

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