Vitale, Alessandro (2025) Fabrication and Characterization of a Magnetic Tunnel Junction. Bachelor's Thesis, Physics.
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Abstract
A 2 nm thin amorphous aluminum oxide layer was used as a tunnel barrier in Co/Al2O3/Ni80Fe20 tunnel junctions, achieving a tunneling magnetoresistance of up to 3.36 % at 75 K. TMR was observed to appreciably decrease with both an increase in temperature and bias voltage, exhibiting trends observed in literature despite a lack of data points. Furthermore, comparison with literature helped identify all alternative conduction paths to direct tunneling which contributed to the poor TMR obtained, making it possible to evaluate and suggest improvements to the fabrication method used. Furthermore, a metal/insulator/metal tunnel junction was fabricated and its resistance was observed to significantly increase with a decrease in temperature, improving the accuracy of Simmons model fitting as it did so.
| Item Type: | Thesis (Bachelor's Thesis) |
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| Supervisor name: | Banerjee, T. |
| Degree programme: | Physics |
| Thesis type: | Bachelor's Thesis |
| Language: | English |
| Date Deposited: | 07 Jul 2025 11:38 |
| Last Modified: | 07 Jul 2025 11:38 |
| URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/35826 |
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