Microwave driving of transition metal defect spins coupled to nuclear spins in SiC

Ion, Irina (2020) Microwave driving of transition metal defect spins coupled to nuclear spins in SiC. Master's Thesis / Essay, Physics.

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Abstract

External control over fundamental quantum mechanical phenomena paves the way to novel applications in areas of communication and computation. Quantum cryptography, quantum memories, quantum networks and quantum computers rely on the ability to store, process and communicate quantum information. Color centers in silicon carbide (SiC) are a promising platform for such applications, as they provide localized electronic spin states that can function as qubits. These defects are bright optical emitters with long spin coherence time, and enable interfacing with photons in the (near-) telecom range. At the same time, their integration into a host material like SiC, which is industrially-mature, allows relatively easy fabrication and integrability into more complex devices. In this work, we focus on the highly anisotropic system of molybdenum and vanadium defects in SiC. Although recent experimental and theoretical investigations have unraveled many of their spin properties, they have also raised significant questions: theoretical investigations suggest that driving spin resonances in the ground state of these defects should be forbidden by the symmetry of the defect. Nonetheless, recent experimental work on V defects in SiC show clear microwave driving of the defect spins. Here, we use a first-principles approach to investigate whether this apparent discrepancy can be resolved by considering the interactions between electronic and nuclear spins via the hyperfine interaction.

Item Type:	Thesis (Master's Thesis / Essay)
Supervisor name:	Wal, C.H. van der
Degree programme:	Physics
Thesis type:	Master's Thesis / Essay
Language:	English
Date Deposited:	07 Aug 2020 14:48
Last Modified:	07 Aug 2020 14:48
URI:	https://fse.studenttheses.ub.rug.nl/id/eprint/22923

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