Kamping, Simon (2025) Fabrication and Electrical Characterization of Memristive MIS Junctions on Nb:STO. Bachelor's Thesis, Applied Physics.
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Abstract
As traditional computing architectures near their physical and energy-efficiency limits, memristors emerge as a promising solution by enabling co-location of memory and computation. This thesis explores the fabrication and electrical characterization of memristive metal–insulator–semiconductor (MIS) junctions built on Nb-doped SrTiO₃ (Nb:STO), incorporating an ultra-thin Al₂O₃ tunnel barrier and cobalt contacts. The MIS structure addresses common limitations of Schottky junctions. Devices were fabricated using UV lithography and plasma oxidation to form a 0.7 nm Al₂O₃ insulating layer. Electrical measurements revealed reproducible resistive switching behavior with minimal device-to-device variation. Notably, smaller devices showed enhanced dynamic range and current density due to edge effects, where electric fields enhance near the perimeter, increasing local tunneling probability. These findings highlight the potential of MIS-based memristors for scalable, energy-efficient neuromorphic computing. Future research is advised to explore time-dependent switching dynamics and alternative barrier materials.
| Item Type: | Thesis (Bachelor's Thesis) |
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| Supervisor name: | Banerjee, T. |
| Degree programme: | Applied Physics |
| Thesis type: | Bachelor's Thesis |
| Language: | English |
| Date Deposited: | 07 Jul 2025 11:43 |
| Last Modified: | 07 Jul 2025 11:43 |
| URI: | https://fse.studenttheses.ub.rug.nl/id/eprint/35858 |
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